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Deep Level Structure of Semi-Insulating Movpe Gaas Grown by Controlled Oxygen Incorporation

Published online by Cambridge University Press:  22 February 2011

J. W. Huang  and
T. F. Kuech
J. W. Huang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

Semi-insulating oxygen-doped GaAs layers have been grown by low pressure metalorganic vapor phase epitaxy (MOVPE) using aluminum-oxygen bonding based precursor diethyl aluminum ethoxide (DEALO). Resistivities of more than 2x109 Ω-cm at 294 K have been achieved. Deep level structure responsible for the high resistivity was investigated by deep level transient spectroscopy (DLTS) using DEALO and disilane co-doped GaAs p+-n homojunction. Multiple deep level peaks were observed, and the relative peak heights were found to vary with the dopant concentrations. Major deep levels were electron traps with ionization energy between 0.75 and 0.95 eV below conduction band edge minimum. An activation energy of 0.81 eV was deduced from temperature-dependent resistivity measurement, and should be closely related to the major0.75 eV peak in DLTS spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 305
Copyright
Copyright © Materials Research Society 1994

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References

1. Smith, F. W., Calawa, A. R., Chen, C. L., Manfra, M. J., and Mahoney, L. J., IEEE Electron Device Lett. 9, 77 (1988).CrossRefGoogle Scholar
2. Bass, S. J., J. Crystal Growth 44, 29 (1978).CrossRefGoogle Scholar
3. Long, J. A., Riggs, V. G., and Johnston, W. D. Jr., J. Crystal Growth 69, 10 (1984).CrossRefGoogle Scholar
4 Goorsky, M. S., Kuech, T. F., Cardone, F., Mooney, P. M., Scilla, G. J., and Potemski, R. M., Appl. Phys. Lett. 58, 1979 (1991).CrossRefGoogle Scholar
5. Pagnod-Rossiaux, Ph., Lambert, M., Gaborit, F., Brillouet, F., Garabedian, P., and Gouezigou, L. Le, J. Crystal Growth 120, 317 (1992).CrossRefGoogle Scholar
6. Huang, J. W., Gaines, D. F., Kuech, T. F., Potemski, R. M., and Cardone, F., presented at the 1993 EMC, Santa Barbara, CA, 1993 (to be published).Google Scholar
7. Kuech, T. F., Wolford, D. J., Veuhoff, E., Deline, V., Mooney, P. M., Potemski, R., and Bradley, J., J. Appl. Phys. 62, 632 (1987).CrossRefGoogle Scholar
8. Wang, P. J., Kuech, T. F., Tischler, M. A., Mooney, P., Scilla, G., and Cardone, F., J. Appl. Phys. 64, 4975 (1988).CrossRefGoogle Scholar
9. Mooney, P. M., J. Appl. Phys. 67, R1 (1990).CrossRefGoogle Scholar
10. Lampert, M. A. and Mark, P., Current Iniection in Solids (Academic Press, New York, 1970).Google Scholar