Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-12T08:18:04.137Z Has data issue: false hasContentIssue false
  • English
  • Français

Decomposition Kinetics of Tetraethoxysilane on SiO2

Published online by Cambridge University Press:  22 February 2011

Bradley G. Todd ,
John B. Hudson  and
Peter K-C. Wu
Bradley G. Todd
Affiliation:
IBM corporation, Hopewell Junction, NY 12533
John B. Hudson
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Peter K-C. Wu
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

The decomposition of tetraethoxysilane (TEOS) on a thermally grown SiO2 surface has been studied using molecular beam scattering, with mass spectrometric detection and time of flight techniques. Decomposition was characterized over a range of temperatures from ambient to 1100 K using a mass spectrometer having a line of sight to the sample surface. Time of flight measurements were used to characterize parent and product species and to determine surface residence time. The initial step in the decomposition process at low temperatures is the loss of one ethoxy ligand to produce triethoxysilane, ethylene and possibly water as gas phase products. At temperatures above 850 K there is a change in the rate limiting process and an abrupt increase in the decomposition probability. Observed kinetics are explained in terms or an adsorbed molecular precursor mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 543
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tedder, L. L., Lu, G. Q. and Crowell, J. E., J. Appl. Phys. 69, 7037, (1991).Google Scholar
2. Tedder, L. L. and Crowell, J. E., J. Vac. Sci. Technol. A9, 1002, (1991).Google Scholar
3. Cale, T. S. and Raupp, G. B., J. Vac. Sci. Technol. B8, 649, (1990).Google Scholar
4. Cale, T. S., Raupp, G. B. and Gandy, T. H., J. Vac. Sci. Technol. A10, 1128, (1992).Google Scholar
5. Han, B., PhD. Thesis, Rensselaer Polytechnic Institute, December, 1991.Google Scholar
6. Cornu, A. and Massot, R., Compilation of Mass spectra Data. Heyden & SCM, London, 1975.Google Scholar
7. Crowell, J., Tedder, L., Cho, H-C. and Cascarano, F. M., J. Vac. Sci. Technol. A8, 1864, (1990).Google Scholar