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Deactivation of Ultra Shallow B and BF2 Profiles After Non-melt Laser Annealing

Published online by Cambridge University Press:  01 February 2011

Jim Sharp ,
Nicholas E.B Cowern ,
Roger P. Webb ,
Damiano Giubertoni ,
Salvotore Gennaro ,
Massimo Bersani ,
Majeed A. Foad  and
Karen J. Kirkby
Jim Sharp
Affiliation:
[email protected], University of Surrey, School of Electronics and Physical Sciences, Advanced Technology Institute, Guildford, Surrey, GU2 7XH, United Kingdom
Nicholas E.B Cowern
Affiliation:
[email protected], University of Surrey, Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, Guildford, Surrey, GU2 7XH, United Kingdom
Roger P. Webb
Affiliation:
[email protected], University of Surrey, Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, Guildford, Surrey, GU2 7XH, United Kingdom
Damiano Giubertoni
Affiliation:
[email protected], ITC-irst, Trento, N/A, 38050, Italy
Salvotore Gennaro
Affiliation:
[email protected], ITC-irst, Trento, N/A, 38050, Italy
Massimo Bersani
Affiliation:
[email protected], ITC-irst, Trento, N/A, 38050, Italy
Majeed A. Foad
Affiliation:
[email protected], Applied Implant Technologies, 974 E. Arques Avenue, Sunnyvale, California, 94086, United States
Karen J. Kirkby
Affiliation:
[email protected], University of Surrey, Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, Guildford, Surrey, GU2 7XH, United Kingdom
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Abstract

Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 Ω/sq from B implants only to 750-1100 Ω/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

Keywords

laser annealingSiB
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C04-07
Copyright
Copyright © Materials Research Society 2006

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