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Dangling Bonds and Sub-Gap Optical Absorption in Silicon

Published online by Cambridge University Press:  28 February 2011

C. H. Seager ,
P. M. Lenahan ,
K. L. Brower  and
R. E. Mikawa
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185
P. M. Lenahan
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185
K. L. Brower
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185
R. E. Mikawa
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185
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Abstract

The silicon “dangling bond” defect plays a large part in controlling the electronic properties of a-Si, polycrystalline silicon, and the Si/Si0 2 interface. Jackson et al. have suggested that transitions of electrons occupying this defect produce the Urbach-like sub-gap absorption tail seen in two of these materials. We have performed optical and electron spin resonance measurements on polycrystalline silicon, plastically deformed silicon, and Si/Si02 interfaces to further examine this contention. In addition to seeing no measurable absorptance due to dangling bond interface states in the latter system, we conclude from the poor correlation of ESR signals with optical data that the Urbach tail in polycrystalline and deformed silicon is not due to transitions of dangling bond electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 539
Copyright
Copyright © Materials Research Society 1985

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