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Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs

Published online by Cambridge University Press:  26 February 2011

D. C. Jacobson ,
S. J. Pearton ,
R. Hull ,
J. M. Poate  and
J. S. Williams
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
R. Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
J. S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria 3000, Australia
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Abstract

The removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (˜850°C for Be, ˜950°C for Si) than the heavier species (˜900°C for Zn, ˜1000°C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm−2) of dislocation loops after 800°C, 3s anneals of high dose (1×1015 cm−2) implanted GaAs, which are gradually reduced in density after higher temperatures anneals (˜1000°C). The remaining loops do not appear to effect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 361
Copyright
Copyright © Materials Research Society 1986

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