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CW Laser Annealing of Low Dose Implants in GaAs

Published online by Cambridge University Press:  15 February 2011

Yves I. Nissim  and
James F. Gibbons
Yves I. Nissim
Affiliation:
Stanford Electronics Laboratories, Stanford, California, 94305
James F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, California, 94305
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Abstract

The possibility of annealing low dose implants (≃ 1013cm-2) in GaAs using a cw scanning laser has been investigated. We have observed that above the threshold of laser-induced damage, a gallium oxide (3-Ga2O3) can be grown at laser scan speeds of 0.5mm/sec. The heat transferred to the substrate during the growth of the oxide is utilized to anneal low dose Si implanted layers. As suggested by sheet electrical measurements, close to complete activation of the implanted species is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 275
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. See for example, Eisen, F. H. in: Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S. eds. (Academic Press, New York 1980) p. 309.Google Scholar
2. Fan, J. C. C., Donnelly, J. P., Bozler, C. O. and Chapman, R. L., Proc. 7th International Symposium on GaAs and Related Compounds, 1978 (Institute of Physics, London 1979) p. 472.Google Scholar
3. Gat, A. and Gibbons, J. F., Appl. Phys. Lett. 32, 142 (1978).Google Scholar
4. Nissim, Y. I., Lietoila, A., Gold, R. B. and Gibbons, J. F., J. Appl. Phys. 51, 274 (1980).Google Scholar