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CVD Diamond as Dielectric Material for Capacitor Applications

Published online by Cambridge University Press:  10 February 2011

S. Heidger ,
S. Fries-Carr ,
J. Weimer ,
B. Jordan  and
R. Wu
S. Heidger
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Dayton, OH 45432
S. Fries-Carr
Affiliation:
U.S. Air Force, AFRL/PRPE, Wright-Patterson AFB OH 45433
J. Weimer
Affiliation:
U.S. Air Force, AFRL/PRPE, Wright-Patterson AFB OH 45433
B. Jordan
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Dayton, OH 45432
R. Wu
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Dayton, OH 45432
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Abstract

Diamond films synthesized using Microwave Plasma Chemical Vapor Deposition (MWCVD) were evaluated for use as dielectric material for high power and high temperature capacitors. The effect that the deposition parameters and annealing have on the frequency and temperature stability of the electronic properties was investigated. Dielectric constants ranging between 8.0 and 4.2 and resistivities between 1× 108 ohm-cm and 5×1014 ohm-cm were obtained. Diamond produced using less than 6.6% methane had very stable dielectric constants over the frequency range of 100 Hz to IMHz, and the loss tangent was less than 0.01. Adding oxygen to the precursor gas increased the dielectric constant and lowered the loss tangent of CVD diamond, but the resistivity was also lowered. As the temperature increased to 300°C, the dielectric constant and loss tangent increased. However, when diamond was annealed to 700°C, there was less than a 5% change in the dielectric constant from 23°C to 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 255
Copyright
Copyright © Materials Research Society 1998

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References

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