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Current Transport in CuInS2 Solar Cells Depending on Absorber Preparation

Published online by Cambridge University Press:  21 March 2011

Joachim Reiβ ,
Jonas Malmström ,
Axel Werner ,
Imke Henge ,
Reiner Klenk  and
Martha Ch. Lux-Steiner
Joachim Reiβ
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D-14109 Berlin, Germany
Jonas Malmström
Affiliation:
Ångström Solar Center, Uppsala University, P.O. Box 534, SE-75121 Uppsala, Sweden
Axel Werner
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D-14109 Berlin, Germany
Reiner Klenk
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D-14109 Berlin, Germany
Martha Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Glienicker Strasse 100, D-14109 Berlin, Germany
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Abstract

According to our model for the current transport in CuInS2/CdS/ZnO solar cells presented previously, the dominant recombination under illumination occurs at the CuInS2/CdS interface. In this contribution we expand this model for cells where the absorber has been prepared in different sequential processes by using results from jV curve measurements performed at varied temperature and illumination. We find that in contrast to CuInSe2 and CuGaSe2 solar cells from the Ångström Solar Center the CuInS2 cells exhibit a qualitative change in the dominant recombination mechanism between the dark and under illumination. The dominant recombination mechanism under illumination appears to be affected by absorber preparation parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H9.4
Copyright
Copyright © Materials Research Society 2001

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References

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