Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-24T18:13:40.737Z Has data issue: false hasContentIssue false
  • English
  • Français

Curing Study of Hydrogen Silsesquioxane Under H2/N2 Ambient

Published online by Cambridge University Press:  17 March 2011

Huey-Chiang Liou ,
Evan Dehate ,
Jerry Duel  and
Fred Dall
Huey-Chiang Liou
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Evan Dehate
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Jerry Duel
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Fred Dall
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Get access

Abstract

Thin film properties of hydrogen silsesquioxane (HSQ) cured at different temperature under N2 and H2/N2 ambients have been studied. In this study, it was found that compared to an N2 ambient, film curing in an H2/N2 ambient will impact HSQ properties when the temperature is 400°C – 500°C. H2/N2 ambient can be used to minimize the dielectric constant while increasing modulus of the films. The data indicates that H2 can minimize the oxidation of the HSQ films and maintain the dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.12.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.Google Scholar
2. Jeng, S. P., Taylor, K., Seha, T., Chang, M., Fattaruso, J., and Havemann, R., Proceedings of VLSI symposium, Kyoto, Japan, 1995, pp. 15–21.Google Scholar
3. Loboda, M., Grove, C. M., Schneider, R. F., J. Electrochem. Soc., 145, 1998, p. 2861.10.1149/1.1838726Google Scholar
4. Liou, H.-C. and Pretzer, J., Thin Solid Films, 335, 1998, pp. 186–191.10.1016/S0040-6090(98)00881-5Google Scholar
5. Bremmer, J., Liu, Y., Gruszynski, K., and Dall, F., Mater. Res. Symp. Proc. 476, 1997, p. 37.10.1557/PROC-476-37Google Scholar
6. Pharr, G. M. and Oliver, W. C., MRS Bulletin, July, 1992, p. 28–33.10.1557/S0883769400041634Google Scholar
7. Bremmer, J., Gruazynski, K., Saha, C., and Chung, K., VMIC 1998, P. 631.Google Scholar