Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T13:48:55.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Cu(In,Ga)Se2 Thin-Film Evolution During Growth from (In,Ga)2Se3 Precursors

Published online by Cambridge University Press:  21 March 2011

Jehad AbuShama ,
Rommel Noufi ,
Yanfa Yan ,
Kim Jones ,
Brian Keyes ,
Pat Dippo ,
Manuel Romero ,
Mowafak Al-Jassim ,
Jeff Alleman  and
Don L. Williamson
Jehad AbuShama
Affiliation:
Physics Department, Colorado School of Mines, Golden, CO 80401
Rommel Noufi
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Yanfa Yan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Kim Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Brian Keyes
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Pat Dippo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Manuel Romero
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Mowafak Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Jeff Alleman
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Don L. Williamson
Affiliation:
Physics Department, Colorado School of Mines, Golden, CO 80401
Get access

Abstract

We examined the Cu(In,Ga)Se2 thin-film growth from (In,Ga)2Se3 precursors and found that the evolution of the microstructure and intrinsic native defects depends on the compositional changes that occur as the film transitions from being Cu rich to In(Ga) rich.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H7.2
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., and Noufi, R., Prog. Photovolt. Res Appl 7, 311 (1999).Google Scholar
2. Ullal, H.S., Zweibel, K., and Roedern, B. von, Proceedings of the 28th IEEE PVSC, Anchorage, Alaska, Sept. 2000, in press.Google Scholar
3. Boehnke, U.C. and Kuhn, G., J. Materials Science 22, 1635 (1987).Google Scholar
4. Park, J.S., Dong, Z., Kim, S., and Perepesko, J.H., J. Appl. Phys. 87(8), 3683 (2000).Google Scholar
5. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Negami, T., and Wada, T., J. Mater. Res. 14(12), 4514 (1999).Google Scholar
6. Wada, T., Kohara, N., Negami, T., and Nishitani, M., J. Mater. Res. 12(6), 1456 (1997).Google Scholar
7. Hasoon, F.S., Yan, Y., Jones, K.M., Althani, H., Alleman, J., Al-Jassim, M.M., and Noufi, R., Proceedings of the 28th IEEE PVSC, Anchorage, Alaska, Sept. 2000, in press.Google Scholar
8. Niki, S., Fons, P.J., Yamada, A., Lacroix, Y., Shibata, H., Oyanage, H., Nishitani, M., Negami, T., and Wada, T., Appl. Physics Lett. 74(11), 1630 (1999).Google Scholar