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Crystallization of A-Si Films on Low-Melting-Point Glass Substrates

Published online by Cambridge University Press:  28 February 2011

W. K. Park ,
G. S. Chae ,
E. I. Givargizov ,
A. B. Limanov  and
A. N. Kiselev
W. K. Park
Affiliation:
An-Yang Laboratory, Goldstar Co., Ltd., Kyongki-Do, 430–080, Korea
G. S. Chae
Affiliation:
An-Yang Laboratory, Goldstar Co., Ltd., Kyongki-Do, 430–080, Korea
E. I. Givargizov
Affiliation:
Institute of Crystallography, Russian Acad. Sci., Moscow 117333, Russia
A. B. Limanov
Affiliation:
Institute of Crystallography, Russian Acad. Sci., Moscow 117333, Russia
A. N. Kiselev
Affiliation:
Institute of Crystallography, Russian Acad. Sci., Moscow 117333, Russia
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Abstract

Results of experiments on crystallization of thin (50 to 200 nm) amorphous Si films initially deposited onto glass substrates by different techniques (PECVD, LPCVD) and treated by different lasers (argon, excimer, or Cu-vapor) are given. The films treated are characterized by in-plane and cross-sectional TEM, and by microdiffraction. Some conclusions about mechanisms of the crystallization are made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 751
Copyright
Copyright © Materials Research Society 1993

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References

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