Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-02T20:38:18.090Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallisation and Diffusion in <001> Oriented Sapphire Amorphised by Zinc Ion Implantation

Published online by Cambridge University Press:  26 February 2011

L. A. Bunn  and
D. K. Sood
L. A. Bunn
Affiliation:
Microelectronics and Materials Technology Centre, Victoria University of Technology, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne, Victoria 3001, Australia
D. K. Sood
Affiliation:
Microelectronics and Materials Technology Centre, Victoria University of Technology, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne, Victoria 3001, Australia
Get access

Abstract

High dose zinc implantation (1×1016 to 6×1016 ions/cm2) into c-axis sapphire at 770K produces amorphous surface layers. Post-implantation annealing at temperatures at and above 800°C show that the modes of recrystallisation are strongly dependant on ion dose. At low doses formation of crystallites of α and γ phase Al2O3 is seen, with no evidence of any planar epitaxial growth at the original crystalline-amorphous interface. The zinc is seen to diffuse isotropically within the crystallised layer and becomes partially substitutional within the crystallites. At high doses, however, the formation of crystallites is inhibited, with the layer remaining amorphous. A more rapid diffusion of zinc is seen in the amorphous Al2O3, with some of the zinc being lost at the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 417
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. McHargue, C.J., Nucl. Instrum. Meth. B19 /20, 797 (1987), and references therein.Google Scholar
2. White, C.W., Sklad, P.S., Boatner, L.A., Farlow, G.C., McHargue, C.J., Sales, B.C. and Aziz, M.J., Mat. Res. Soc. Symp. Proc. 60, 337 (1986).Google Scholar
3. Mouritz, A.P., Sood, D.K., St.John, D. H., Swain, M.V. and Williams, J.S., Nucl. Instrum. Meth, B19 /20, 805 (1987).Google Scholar
4. Ohkubo, M., Hioki, T. and Kawamoto, J., J. Appl. Phys. 60, 1325 (1986).Google Scholar
5. Paladino, A.E. and Kingery, W.D., J. Chem. Phys. 37, 957 (1962)Google Scholar
6. Cao, D.X., Sood, D.K. and Pogany, A. P., Mat. Res. Soc. Symp. Proc. 100, 113 (1988).Google Scholar