Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-03T08:54:03.146Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystalline Grains and Electrical Properties of Vacuumevaporated SnO2 Thin Films

Published online by Cambridge University Press:  15 February 2011

W. K. Man ,
H. Yan ,
S. P. Wong ,
T. K. S. Wong  and
I. H. Wilson
W. K. Man
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong
H. Yan
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong
S. P. Wong
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong
T. K. S. Wong
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore
I. H. Wilson
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong
Get access

Abstract

We have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of these metal films. Surface morphology of the SnO2 thin films was observed by atomic force microscopy. The grain size of the SnO2 thin films is found to increase with the film thickness and oxidation temperature. Kinetics of the grain growth is discussed in terms of a 3-dimensional diffusion limited process. The diode current-voltage (I-V) characteristic of the SnO2/Si heterojunctions (isotype and anisotype) was measured in the temperature range of 14K-383K. Changes in the diode ideality factor and threshold voltage with temperature are discussed. In addition, we present ambient tunnelling I-V results measured from individual SnO2 grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 441
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Song, Kug-Hyun and Park, Soon-Ja, J. Mat. Sci.: Mat. In Elect., 4, 249 (1993).Google Scholar
2. Xu, C., Tamaki, J., Miura, N. and Yamazoe, N., Denki Kagaku, 58, 1143 (1990).Google Scholar
3. Yamazoe, N., in Proceedings of The Third International Meeting on Chemical Sensors, Cleveland, Ohio, USA, September 1990, p.3.Google Scholar
4. Hozer, Leszek, in Semiconductor Ceramics, edited by Holland, Diane (Ellis Horwood Ltd., England and Polish Scientific Publishers PWN Ltd., Poland, 1994) pp. 10–15.Google Scholar
5. Man, W.K., Yan, H., Wong, S.P., Wong, T.K.S. and Wilson, I.H. in 42nd National Symposium of the American Vacuum Society, Oct. 16–20, 1995, Minneapolis, MN.Google Scholar
6. Jie, Luo and Chao, Xu, J. Non-Cryst. Solids, 119, 37 (1990).Google Scholar
7. Colombin, L. and Jelli, A., J. Non-Cryst. Solids, 19, 87 (1975).Google Scholar
8. Wong, T.K.S. and Man, W.K., to be published in Thin Solid Films.Google Scholar
9. Hammiche, A., Webb, R.P. and Wilson, I.H., Vacuum, 45, 569 (1994).Google Scholar
10. Nagatomo, T., Endo, M. and Omoto, O., Jpn. J. Appl. Phys., 18, 1103 (1979).Google Scholar
11. Persin, M., Vlahovic, B. and Urli, N., Vacuum, 40, 209 (1990).Google Scholar
12. Vishwakarma, S.R., Rahmatullah, and Prasad, H.C., Solid-State Electronics, 36, 1345 (1993).Google Scholar
13. Nishino, T. and Hamakawa, Y., Jpn. J. Appl. Phys., 9, 1085 (1970).Google Scholar
14. Oldham, W.G. and Milnes, A.G., Solid-State Electronics, 7, 153 (1964).Google Scholar