Published online by Cambridge University Press: 15 February 2011
Co85Cr15-xTax(x:0, 2at%)/Cr films with microscopically flat surface were investigated for high density recording media. These films were deposited on silicon wafer and glass substrates at the substrate temperature Ts of 350 °C at argon pressure as low as sub-mTorr by using Facing Targets Sputtering (FTS) apparatus. The elevating of Ts promoted the Cr(200) orientation in film plane, leading to the in-plane c-axis orientation of Co crystallites. Addition of some elements such as Si, Ge and Ta in Cr thin film was found to stabilize Cr(110) crystal orientation even at Ts of 300 °C.