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Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth

Published online by Cambridge University Press:  01 February 2011

Takeshi Tawara ,
Yuko Ueki ,
Shunichi Nakamura ,
Masahide Gotoh ,
Yoshiyuki Yonezawa  and
Masaharu Nishiura
Takeshi Tawara
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., Device Technology Lab., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yuko Ueki
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Shunichi Nakamura
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masahide Gotoh
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yoshiyuki Yonezawa
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masaharu Nishiura
Affiliation:
[email protected], Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
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Abstract

The dependence of phosphorus doping on crystal face and C/Si ratio in the epitaxial growth of 4H-SiC using phosphine were investigated. Phosphorus incorporation was highest on off-axis (000-1) and lowest on off-axis (0001). Phosphorus incorporation on (11-20) came between that on off-axis (0001) and (000-1). With increasing C/Si ratio from 0.5 to 2.5, phosphorus incorporation increased on (11-20) and off-axis (000-1). Phosphorus incorporation on off-axis (0001) showed unclear C/Si ratio dependence. On (000-1), the highest phosphorus concentration of 2 × 1018cm-3 was obtained by an increasing PH3 flow rate. The roughness, growth rate, and surface morphology of the high phosphorus doped epilayer were investigated.

Keywords

epitaxyPsecondary ion mass spectroscopy (SIMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-26
Copyright
Copyright © Materials Research Society 2006

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