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The Critical Thickness of the Dislocation-Free Stranski Krastanow Pattern of Growth.

Published online by Cambridge University Press:  15 February 2011

Michael A. Grinfeld
Michael A. Grinfeld*
Affiliation:
Department of Mathematics, Rutgers University, New Brunswick, NJ 08903
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Abstract

It was demonstrated earlier [1,2] in the framework of equilibrium thermodynamics that the morphological stability of the free boundaries and interfaces in crystals is extremely sensitive to the presence of shear stresses. Relying on that idea we have established the formula H = μσ/τ2 of a critical thickness of solidifying He4 films and of the dislocation-free Stranski-Krastanow growth of epitaxial films (where σ – the coefficient of surface tension, μ - the shear module of the crystal, τ - the external or misfit stress). In this report we present certain facts pertaining to possible patterns of the growing corrugations and introduce the second critical thickness at which a symmetry change in the patterns has to occur.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 233
Copyright
Copyright © Materials Research Society 1993

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References

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