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Critical Considerations in Polymer Thin-Film Transistor (TFT) Dielectrics

Published online by Cambridge University Press:  01 February 2011

Munira Raja ,
Giles Lloyd ,
Naser Sedghi ,
Simon J. Higgins  and
William Eccleston
Munira Raja
Affiliation:
Department of Electrical Engineering and Electronics
Giles Lloyd
Affiliation:
Department of Electrical Engineering and Electronics
Naser Sedghi
Affiliation:
Department of Electrical Engineering and Electronics
Simon J. Higgins
Affiliation:
Department of Chemistry University of Liverpool, Liverpool L69 3BX, UK.
William Eccleston
Affiliation:
Department of Electrical Engineering and Electronics
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Abstract

We present a study of aqueous and plasma anodised aluminium oxide (Al2O3) and its performance in thin film transistors (TFTs). The current through the oxide was measured with aluminium electrodes and with one of the electrode replaced by poly(3-hexylthiophene)(P3HT). The current increased by up to 2 orders of magnitude with P3HT. The current increased further when the polymer was doped with different percentages of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). It was also found to be dependent on the thickness of the polymer film. Surprisingly, the oxide current fell to its initial value when the polymer film was removed. Two mechanisms may explain the behaviour in these devices: charge injection and/or displacement. C-V plots were obtained from the MOS capacitors and were frequency dependent. They also showed substantial hysteresis, with a lateral shift along the voltage axis. This indicates the presence of a mobile species that increases with the concentration of dopant. We deduce that much of the increased gate current is associated with displacement currents induced by ion motion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P6.5
Copyright
Copyright © Materials Research Society 2002

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References

1. Lloyd, G. Raja, M. Sellers, I. Sedghi, N. Lucrezia, R. Di, Higgins, S. J. and Eccleston, W. Microelectronic Engineering 59, 323 (2001).Google Scholar
2. McCullough, R. D. Williams, S. P. Tristram-Nagle, S., Jayaraman, M. Ewbank, P. C. and Miller, L., Synthetic Metals 69, 279 (1995).Google Scholar
3. Traznadel, M. Pron, A. Zagorska, M. Chrzaszcz, R. and Pielichowski, J. Macromolecules 31, 5051 (1998).Google Scholar
4. Raja, M. Lloyd, G. Sedghi, N. Lucrezia, R. Di, Higgins, S. J. and Eccleston, W. MRS Meeting Fall Meeting 2001.Google Scholar
5. Sirringhaus, H. Brown, P. J. Friend, R. H. Nielsen, M. M. Bechgaard, K. Langeveld-Voss, B. M. W., Spiering, A. J. H. Jansen, R. A. J. Meijer, E. W. Herwig, P. and Leeuw, D. M. de, Nature 401, 685 (1999).Google Scholar
6. Sedghi, N. Lloyd, G. Raja, M. Lucrezia, R. Di, Higgins, S. J. and Eccleston, W. Mat. Res. Soc. Symp. Proc. 708, BB10.57 (2002).Google Scholar
7. Buiu, O. Kennedy, G. P. Gartner, M. and Taylor, S. IEEE Trans. on Plasma Science 26 (6), 1700 (1998).Google Scholar
8. Musa, I. Munindrasdasa, D. A. I. Amaratunga, G. A. J. and Eccleston, W. Nature 395, 362 (1998).Google Scholar