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Covalent Nitrides for Maskless Laser Writing of Microscopic Metal Lines

Published online by Cambridge University Press:  22 February 2011

Leon Maya
Leon Maya*
Affiliation:
Chemistry Division, Oak Ridge National Laboratory, P.O.B. 2008, Oak Ridge, TN 37831–6119.
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Abstract

Selected covalent metal nitrides with limited thermal stability, such as Sn3N4, Cu3 N, and Ni3N, were prepared in a glow discharge system by reactive sputtering in a nitrogen plasma. These compounds were characterized by chemical analysis and their thermal behavior established by temperature-programmed thermal decomposition. These materials decompose into the elements with the rate reaching a maximum at 615, 465, and 405 °C for Sn, Cu, and Ni respectively. The feasibility of using these coatings to generate metal lines by maskJess laser writing was explored. Conductingmetal lines, a few micron in width, could be generated with each of these nitrides. The resistivities of the metal lines were within an order of magnitude of those of the bulk metals for Cu and Ni and somewhat more for Sn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 203
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Ward, T. L., Kodas, T. T., and Jackson, L., Chemical Perspectives of Microelectronic Material II. Edited by Interrante, L.V. (Mat Res. Soc. Symp. Proc. Vol 204, Boston MA (1990), pp 467–472.Google Scholar
2. Bernhardt, A. F., McWilliams, B. M., Mitlitsky, F., and Whitehead, J., Science and Technology of Microfabrication. Edited by Howard, R. E., Hu, E. L., Namba, S., and Pang, S. (Mat Res. Soc. Symp. Proc. Vol 76, Boston, MA 1986), pp 223–234.Google Scholar
3. Solanki, R., Ritchie, W. H., and Collins, G. J., Appl. Phys. Lett. 43, 454,(1983).Google Scholar
4. Krchnavek, R. R., Gilgen, H. H., and Osgood, R. M. Jr, J. Vac. Sci. Technol. B 2, 641, (1984).Google Scholar
5. Sanchez, G., Castano, J. L., Garrido, J., Martinez, J., and Piqueras, J., J. Electrochem. Soc. 138, 3039, (1991).Google Scholar
6. Bernier, R., Ann. Chim. 6, 104, (1951).Google Scholar
7. Sinha, A. K., Giessen, B. C., and Polk, D. E., Treatise on Solid State Chemistry Edited by Hannay, N. B. (Plenum Press, New York, 1976), Vol 3 p. 1.Google Scholar
8. Juza, R. and Rabenau, A., Z. Anorg. Chem. 285, 212, (1956).Google Scholar