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Coupling of Electronic and Structural Properties of Hydrogen in Crystalline Silicon

Published online by Cambridge University Press:  26 February 2011

Wolfgang Csaszar  and
Arthur L. Endrös
Wolfgang Csaszar
Affiliation:
Siemens Corporate Research and Development, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Arthur L. Endrös
Affiliation:
Siemens Corporate Research and Development, Otto-Hahn-Ring 6, D-81739 Munich, Germany
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Abstract

Theory has made great progress during recent years in calculating the fundamental properties of monatomic hydrogen in crystalline silicon. By applying the DLTS and DDLTS method we use the hydrogen-carbon complex which consists of an electronically inactive carbon atom on a substitutional lattice site and a hydrogen atom near the bond-center position to detect theoretically predicted properties of hydrogen in silicon. The results of two independent experiments show that there exists a coupling of the electronic and structural properties of monatomic hydrogen, as predicted by theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 353
Copyright
Copyright © Materials Research Society 1995

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