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Correlation of Structure and Properties of Silicon Devices

Published online by Cambridge University Press:  15 February 2011

R. B. Marcus
R. B. Marcus*
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
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Abstract

Three types of structure-related problems in VLSI materials and the impact of these problems on device properties are discussed: substrate defects and device leakage/breakdown, metallization linewidth and device failure, and SiO2/polysilicon interface texture and device leakage/breakdown. In many cases transmission electron microscopy is the major source of information on structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 441
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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