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Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

Published online by Cambridge University Press:  13 June 2014

N. Sugiyama ,
M. Yamada ,
Y. Urakami ,
M. Kobayashi ,
T. Masuda ,
K. Nishikawa ,
F. Hirose  and
S. Onda
N. Sugiyama
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan DENSO CORP., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan
M. Yamada
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan DENSO CORP., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan
Y. Urakami
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan DENSO CORP., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan
M. Kobayashi
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan SHOWA DENKO K.K., 60, Kiyosaki, Hikone, Shiga 529-1195, Japan
T. Masuda
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan SHOWA DENKO K.K., 60, Kiyosaki, Hikone, Shiga 529-1195, Japan
K. Nishikawa
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan Toyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan
F. Hirose
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan DENSO CORP., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan
S. Onda
Affiliation:
R&D Partnership for Future Power Electronics Technology, Tokyo 105-0001, Japan DENSO CORP., 500-1, Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan
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Abstract

The correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- Raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11-20) faces by four point bending test, under measuring the frequency shift in micro-Raman spectroscopy. The results revealed that the linearity coefficients between stress and Raman shift were -1.96 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, -2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and -2.70 cm-1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. Determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-Raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.

Keywords

crystal growthRaman spectroscopydefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd01-07
Copyright
Copyright © Materials Research Society 2014 

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References

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