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The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

Published online by Cambridge University Press:  01 February 2011

Chun-Ping Liu ,
Yen-Shih Ho ,
Tien-Chen Hu  and
Bae-Heng Tseng
Chun-Ping Liu
Affiliation:
[email protected], Institute of Materials Science and Engineering, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaohsiung, N/A, 804, Taiwan, 886-7-525-4099
Yen-Shih Ho
Affiliation:
[email protected], Kaohsiung University of Applied Sciences, Department of Electrical Engineering, Kaohsiung, N/A, 807, Taiwan
Tien-Chen Hu
Affiliation:
[email protected], National Chen Kung University, Institute of Engineering Management, Tainan, N/A, 701, Taiwan
Bae-Heng Tseng
Affiliation:
[email protected], National Sun Yat-Sen University, Institute of Materials Science and Engineering, Kaohsiung, N/A, 804, Taiwan
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Abstract

This article shows the root cause of Cu corrosion and sulfur contamination due sulfite vapor reflow through drainpipe of load cup to the original three-step Cu CMP equipment. Now, we provide a solution which to modify the arrangement of the drainpipe in original three-step Cu CMP equipment. This is an effective implement for reduction the defects of Cu corrosion and sulfur contamination from long-term observations.

Keywords

CMPcorrosionCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-10
Copyright
Copyright © Materials Research Society 2006

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References

references

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