Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T18:54:13.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

Published online by Cambridge University Press:  01 February 2011

Hideaki Zama ,
Yuuji Nishimura ,
Michiyo Yago  and
Mikio Watanabe
Hideaki Zama
Affiliation:
[email protected], ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan, +81-55-998-1546, +81-55-998-1518
Yuuji Nishimura
Affiliation:
[email protected], ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Michiyo Yago
Affiliation:
[email protected], ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Mikio Watanabe
Affiliation:
[email protected], ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Get access

Abstract

Chemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Keywords

chemical vapor deposition (CVD) (deposition)Cufilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-27
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A. and Hochberg, A. K., J de Phys. IV, Coll. C2, 1, 271–278(1991).Google Scholar
2 Shin, H. K., Chi, K. M., Hampden-Smith, M. J., Kodas, T. T., Farr, J. D. and Paffett, M., Mater. Res. Soc. Symp. Proc. 204, 421–427(1991).Google Scholar
3 Reynolds, S. K., Smart, C. J., Baran, E. F., Baum, T. H., Larson, C.E. and Brock, P. J., Appl. Phys. Lett. 59(18), 2332–2334(1991).Google Scholar
4 Hemert, R. L. Van, Spendlove, L. B. and Sievers, R. E., J. Electrochem. Soc. 112, 1123(1965).Google Scholar