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Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

Published online by Cambridge University Press:  31 January 2011

Guofu Hou ,
Xiaoyan Han ,
Changchun Wei ,
Xiaodan Zhang ,
Guijun Li ,
Zhihua Dai ,
Xinliang Chen ,
Jianjun Zhang ,
Ying Zhao  and
Xinhua Geng
Guofu Hou
Affiliation:
[email protected], Nankai University, Institute of Photoelectronics, 94#,Weijin Road,Nankai District, Tianjin, 300071, China
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Abstract

High rate deposition of hydrogenated microcrystalline silicon (μc-Si:H) films and solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process in a high power and high pressure regime. The experiment results demonstrate that in high-rate deposited μc-Si:H films, the structural evolution is much more dramatic than that in low-rate deposited μc-Si:H films. A novel VHF power profiling technique, which was designed by dynamically decreasing the VHF power step by step during the deposition of μc-Si:H intrinsic layers, has been developed to control the structural evolution along the growth direction. Another advantage of this VHF power profiling technique is the reduced ion bombardments on growth surface because of decreasing the VHF power. Using this method, a significant improvement in the solar cell performance has been achieved. A high conversion efficiency of 9.36% (Voc=542mV, Jsc=25.4mA/cm2, FF=68%) was obtained for a single junction μc-Si:H p-i-n solar cell with i-layer deposited at deposition rate over 10 �/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A07-21
Copyright
Copyright © Materials Research Society 2009

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