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Controlling Crystallization Structures in Thin Si Film for Improving Characteristics of MEMS Resonators

Published online by Cambridge University Press:  13 August 2012

Shinya Kumagai
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku, Nagoya, 468-8511, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
Hiromu Murase
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku, Nagoya, 468-8511, Japan
Takashi Tomikawa
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku, Nagoya, 468-8511, Japan
Syohei Ogawa
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku, Nagoya, 468-8511, Japan
Ichiro Yamashita
Affiliation:
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
Yukiharu Uraoka
Affiliation:
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
Minoru Sasaki
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku, Nagoya, 468-8511, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
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Abstract

An approach to control the tensile stress and Q factor of thin Si film beams in MEMS resonators was investigated. Metal-induced lateral crystallization (MILC) using Ni nanoparticles that were synthesized within a cage-shaped protein, apoferritin, was applied to a thin morphous Si film for making a MEMS resonator with thin film beams. The MILC produced a thin polycrystalline Si (poly-Si) film with large crystallized domain (50-60 μm) with nearly the same crystalline orientation, whereas the poly-Si film obtained by conventional annealing (without MILC) consisted of small grains (less than 1 μm) with random orientation. The MEMS resonator with a beam made of poly-Si film by MILC was fabricated. The large domain size and the improved crystallinity increased the tensile stress, and resulted in 20% increase in Q factor in the resonant characteristics.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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