Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T20:50:52.005Z Has data issue: false hasContentIssue false

Controlled Growth of GaAs/AlAs(111)B Superlattices

Published online by Cambridge University Press:  25 February 2011

J.E. Angelo
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN 55455
J.W. Hoehn
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN 55455
A.M. Dabiran
Affiliation:
University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455.
P.I. Cohen
Affiliation:
University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455.
W.W. Gerberich
Affiliation:
University of Minnesota, Department of Chemical Engineering and Materials Science, Minneapolis, MN 55455
Get access

Abstract

In this study, transmission electron microscopy (TEM) was used to investigate the growthconditions which produce the highest quality GaAs(111)B films by molecular beam epitaxy (MBE). Low-temperature growth using both As4 and arsine as an As2 source produced highly twinned structures, although the use of As4 provided for a smoother surface and slightly different defect structure. Two distinct twin boundaries, (112)A and (112)B, were identified by cross-sectional transmission electron microscopy (XTEM). The (112)A defect could be over-grown by a subsequent high temperature growth but the roughness associated with the (112)B defects only increased with further growth. High temperature growth of GaAs and AlAs films, while maintaining the GaAs(11)surface reconstruction, resulted in substantial reduction in the number of twins boundaries. We also found that GaAs(111)B layer quality and surface morphology can be further improved by a high temperature growth with low arsenic to Ga flux ratio of I to 1.5 ona slightly misoriented substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Elcess, K., Lievin, J.L., and Fonstad, C.G., J. Vac. Sci. Technol. B 6, 638 (1988).Google Scholar
2. Tsutsui, K., Mizukami, H., Ishiyama, O., Nakamura, S., and Furukawa, S., Jap. J. Appl. Phys. 29, 468 (1990).Google Scholar
3. Hayakawa, T., Nagai, M., Morishima, M., Horie, H., and Matsumoto, K., Appl. Phys. Lett. 59, 2287 (1990).Google Scholar
4. Hayakawa, T., Morishima, M., and Chen, S., Appl. Phys. Lett 59, 3321 (1991).Google Scholar
5. Chen, P., Rajkumar, K.C., and Madhukar, A., Appl. Phys. Lett. 5, 1771 (1991).Google Scholar
6. Yang, K. and Schowalter, L.J., Appl. Phys. Lett. 60, 1851 (1992).Google Scholar
7. Biegelsen, D.K., Bringans, R.D., Northrup, J.E., and Swartz, L.E., Phys. Rev. B 42, 3195 (1990).Google Scholar
8. Angelo, J.E., Dabiran, A.M., Cohen, P.I., and Gerberich, W.W., submitted to J. Cryst. Growth, (1992).Google Scholar
9. Chen, A., Martin, P., Ballingall, J., Yu, T.H., and Mazurowski, J., Appl. Phys. Lett. 59, 2394 (1991).Google Scholar
10. Morita, E., Ikeda, M., Inoue, M., and Kaneko, K., J. Crys. Growth 106, 197 (1990).Google Scholar
11. Rajkumar, K.C., Chen, P., and Madukar, A., J. Appl. Phys. h9, 2219 (1991).Google Scholar
12. Shitara, T., Kondo, E., and Nishinaga, T., J. Cryst. Growthce 99, 530 (1990).Google Scholar