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Controlled Carbon Nanotube Networks and its Corresponding Channel Effect at High Bias

Published online by Cambridge University Press:  01 February 2011

Jun Huang ,
Bangalore Kiran Rao ,
Harindra Vedala ,
Do-Hyun Kim ,
Minhyon Jeon ,
Wanjun Park  and
Wonbong Choi
Jun Huang
Affiliation:
[email protected], Florida International University, Mechanical and Materials Engineering, 10555 West Flagler Street, Miami, FL, 33174, United States, 3053481343, 3053481932
Bangalore Kiran Rao
Affiliation:
[email protected], Florida International University, Mechanical and Materials Engineering, 10555 West Flagler Street, Miami, FL, 33174, United States
Harindra Vedala
Affiliation:
[email protected], Florida International University, Mechanical and Materials Engineering, 10555 West Flagler Street, Miami, FL, 33174, United States
Do-Hyun Kim
Affiliation:
[email protected], Florida International University, Mechanical and Materials Engineering, 10555 West Flagler Street, Miami, FL, 33174, United States
Minhyon Jeon
Affiliation:
[email protected], Inje University, School of Nanoengineering, Gimhae, 621749, Korea, Republic of
Wanjun Park
Affiliation:
[email protected], SAMSUNG SAIT, Samsung Advanced Institute of Technology, Gihueng-Eup Young-Si Gyeonggi-Do, Gyeonggi, 449-712, Korea, Republic of
Wonbong Choi
Affiliation:
[email protected], Florida International University, Mechanical and Materials Engineering, 10555 West Flagler Street, Miami, FL, 33174, United States
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Abstract

Geometrically controlled single-walled carbon nanotube (SWNT) and multi-walled carbon nanotube (MWNT) networks were fabricated by a width confinement technique to characterize their electrical characteristics. The results demonstrated non-linear resistance decay with the number of conducting channels. The current-voltage characteristics at high field were studied until the electrical breakdown took place. Large current (∼2 mA), low resistance (∼5 KΩ) and current densities exceeding ∼108 A/cm2 were demonstrated from multi-channel MWNT networks confined in a 10 μm × 15 μm trench. Additionally, chronological SEM imaging was used to identify the breakdown sequences in the carbon nanotube networks, which revealed a strong tendency for CNT breakdown to occur in the vicinity of CNT-CNT intersections. Our results offer insights for interconnect applications using CNT networks.

Keywords

nanoscaleelectrical propertiesmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-51
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Snow, E. S., Novak, J. P., Campbell, P. M. et al., Appl. Phys. Lett. 82, 2145 (2003).Google Scholar
2. Stadermann, M., Papadakis, S. J., Falvo, M. R. et al., Phys. Rev. B 69 (2004).Google Scholar
3. Naeemi, A. and Meindl, J. D., IEEE Electron Dev. Lett. 26, 476 (2005).Google Scholar
4. Naeemi, A. and Meindl, J. D., IEEE Electron Dev. Lett. 26, 544 (2005).Google Scholar
5. Naeemi, A., Sarvari, R., and Meindl, J. D., IEEE Electron Dev. Lett. 26, 84 (2005).Google Scholar
6. Kim, P., Shi, L., Majumdar, A. et al., Phys. Rev. Lett. 87, 215502 (2001).Google Scholar
7. Collins, P. G., Hersam, M., Arnold, M. et al., Phys. Rev. Lett. 86, 3128 (2001).Google Scholar
8. Srivastava, N., Joshi, R. V., and Banerjee, K., IEEE International Electron Devices Meeting (IEDM), 257 (2005).Google Scholar
9. Kumar, S., Murthy, J. Y., and Alam, M. A., Phys. Rev. Lett. 95, 066802 (2005).Google Scholar
10. Bachtold, A., Fuhrer, M. S., Plyasunov, S. et al., Phys. Rev. Lett. 84, 6082 (2000).Google Scholar
11. Hu, L., Hecht, D. S., and Gruner, G., Nano Lett. 4, 2513 (2004).Google Scholar
12. Kim, D. H., Huang, J., Shin, H. K., Roy, S., Choi, W. B., Nano Lett. 6, 2821 (2006).Google Scholar
13. Raychowdhury, A. and Roy, K., Proc. of Int. Conf. on Comp Design 4, 237 (2004).Google Scholar
14. Javey, A., Guo, J., Wang, Q. et al., Nature 424, 654–657 (2003).Google Scholar
15. Berger, C., Yi, Y., Wang, Z.L. et al., Appl. Phys. A 74, 363 (2002).Google Scholar
16. Huang, J. Y., Chen, S., Jo, S. H. et al., Phys. Rev. Lett. 94, 236802 (2005).Google Scholar
17. Yao, Z., Kane, C. L., and Dekker, C., Phys. Rev. Lett. 84, 2941 (2000).Google Scholar
18. Javey, A., Guo, J., Paulsson, M. et al., Phys. Rev. Lett. 92, 106804 (2004).Google Scholar
19. Minot, E. D., Yaish, Y., Sazonova, V. et al., Phys. Rev. Lett. 90, 156401–156404 (2003).Google Scholar
20. Fuhrer, M. S., Nygard, J., Shih, L. et al., Science 288, 494 (2000).Google Scholar
21. Collins, P. G., Arnold, M. S., and Avouris, P., Science 292, 706 (2001).Google Scholar