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Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

Published online by Cambridge University Press:  22 February 2011

S. Veprek ,
Ch. Wang  and
G. Ratz
S. Veprek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching-Munich, Federal Republic of Germany
Ch. Wang
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching-Munich, Federal Republic of Germany
G. Ratz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching-Munich, Federal Republic of Germany
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Abstract

We present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 511
Copyright
Copyright © Materials Research Society 1993

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References

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