Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T03:54:30.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)

Published online by Cambridge University Press:  01 February 2011

Gerd Norga ,
Chiara Marchiori ,
Christophe Rossel ,
Alexandre Guiller ,
Jean-Pierre Locquet ,
Heinz Siegwart ,
Daniele Caimi ,
Jean Fompeyrine ,
J. W. Seo  and
Christel Dieker
Gerd Norga
Affiliation:
[email protected], Politecnico di Milano, Department of Physics, Via Anzani 42, Como, N/A, I 22100, Italy
Chiara Marchiori
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Christophe Rossel
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Alexandre Guiller
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean-Pierre Locquet
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Heinz Siegwart
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Daniele Caimi
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean Fompeyrine
Affiliation:
[email protected], IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
J. W. Seo
Affiliation:
[email protected], Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
Christel Dieker
Affiliation:
[email protected], Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
Get access

Abstract

In this paper, we point out the critical role of oxygen stoichiometry in the solid state epitaxy process used for obtaining 5 A EOT in SrTiO3 gate dielectrics on Si. Incomplete oxygenation of the TiO2 fraction of the amorphous SrO.TiO2 film enhances the inherent tendency of TiO2 to react with Si to yield TiSi2 and SiO2. O2 excess is needed to obtain a crystalline interface after UHV crystallization. The solid state epitaxy process results in heavily oxygen deficient films, whose insulating properties can be recovered by an atomic oxygen treatment.

Keywords

epitaxyoxideSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E02-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ashman, C.R., Foerst, C.J., Schwarz, K. and Bloechl, P.E., Phys. Rev. B 69, 75309 (2004).Google Scholar
2 Chambers, S. A., Liang, Y., Yu, Z., Droopad, R., and Ramdani, J., J. Vac. Sci. Technol. A 19, 934 (2001).Google Scholar
3 Foerst, C. J., Ashman, C. R., Schwarz, K., and Bloechl, P. E., Nature 427, 53 (2004).Google Scholar
4 McKee, R. A., Walker, F. J., and Chisholm, M. F., Phys. Rev. Lett. 81, 3014 (1998).Google Scholar
5 Droopad, R., Yu, Z., Ramdani, J., Hilt, L., Curless, J., Overgaard, C., Edwards, J. L., Finder, J., Eisenbeiser, K., Wang, J., Kaushik, V., Ngyuen, B. Y., and Ooms, B., J. Cryst. Growth 227–228, 936 (2001).Google Scholar
6 Eisenbeiser, K., Finder, J. M., Yu, Z., Ramdani, J., Curless, J. A., Hallmark, J. A., Droopad, R., Ooms, W. J., Salem, L., Bradshaw, S., and Overgaard, C. D., Appl. Phys. Lett. 76, 1324 (2000).Google Scholar
7 Jeon, S., Walker, F. J., Billman, C. A., McKee, R. A. and Hwang, H., IEEE IEDM Proceedings, 2004 (2004).Google Scholar
8 Norga, G. J., Guiller, A., Marchiori, C., Locquet, J. P., Siegwart, H., Halley, D., Rossel, C., Caimi, D., Seo, J. W., and Fompeyrine, J., Materials Research Society Symp. Proc. 786, 219 (2004).Google Scholar
9 He, J. Q., Jia, C. L., Vaithyanathan, V., Schlom, D. G., Schubert, J., Gerber, A., Kohlstedt, H. H., Wang, R. H., J. Appl. Phys. 97, 104921 (2005).Google Scholar
10 Hao, J. H., Gao, J., Wang, Z., Yu, D. P., Appl. Phys. Lett 87, 131908 (2005).Google Scholar
11 Norga, G. J., Marchiori, C., Guiller, A., Locquet, J. P., Rossel, Ch., Siegwart, H., Caimi, D., Fompeyrine, J., and Conard, T., Appl. Phys. Lett. 87, 262905 (2005).Google Scholar
12 Norga, G. J., Marchiori, C., Rossel, C., Guiller, A., Locquet, J. P., Siegwart, H., Caimi, D., and Fompeyrine, J., Seo, J. W., and Dieker, Ch., J. Appl. Phys. 99, 084102 (2006).Google Scholar
13 Li, H., Hu, X., Wei, Y., Yu, Z., Zhang, X., Droopad, R., Demkov, A. A., Edwards, J., Moore, K. and Ooms, W., J. Appl. Phys. 93, 4521 (2003).Google Scholar
14 Marchiori, Ch., Sousa, M., Guiller, A., Siegwart, H., Locquet, J.-P., Fompeyrine, J., Norga, G. J., Seo, J. W., Appl. Phys. Lett. 88, 072913 (2006).Google Scholar
15 Liang, Y., Gan, S., and Engelhard, M., Appl. Phys. Lett. 79, 3591 (2001).Google Scholar
16 Larciprete, R., Danailov, M., Barinov, A., Gregoratti, L., and Kiskinova, M., J. Appl. Phys. 90, 4361–4369 (2001).Google Scholar
17 Hubbard, K. J. and Schlom, D. G., J. Mat. Research 11, 2757 (1996).Google Scholar
18 Hauser, J. R. and Ahmed, K., Conference on Characterization and Metrology for ULSI Technology 1998, AIP Conference Proc., Gaithersburg, MD, USA, 1998, p. 235.Google Scholar