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Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification

Published online by Cambridge University Press:  25 February 2011

J. A. Kittl ,
R. Reitano ,
M. J. Aziz ,
D. P. Brunco  and
M. O. Thompson
J. A. Kittl
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
R. Reitano
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
M. J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D. P. Brunco
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
M. O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

The solidification of Si-As alloys induced by pulsed laser melting was studied at regrowth velocities where the partition coefficient is close to unity. The congruent melting temperatures, TO, of Si-As alloys were determined using a temperature measurement technique developed for this work, and were confirmed with TOmeasurements using three other methods. The time-resolved temperature measurement uses a thin-film platinum thermistor, below and electrically isolated from the Si-As alloy layer, to directly measure the temperature during solidification. This, combined with measurements of transient conductance of the Si-As alloy, time-resolved reflectivity and Rutherford Backscattering Spectrometry, permitted the determination of the solid-liquid interface temperature, velocity and partition coefficient, the latent heat of fusion and TO for Si - 4.5 at. % As and Si - 9 at. % As alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 691
Copyright
Copyright © Materials Research Society 1993

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References

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