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The Confinement Profile of As-Grown Movpe AlGaAs/GaAs Quantum Well Structures
Published online by Cambridge University Press: 10 February 2011
Abstract
Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.
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- Copyright © Materials Research Society 1997
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