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Conducting Thin Films of Ruthenium Oxide Prepared by Mocvd

Published online by Cambridge University Press:  10 February 2011

P. Hones ,
C.-H. Kohli ,
R. Sanjinés ,
F. Lévy ,
T. Gerfin  and
M. Grätzel
P. Hones
Affiliation:
EPFL-Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland, [email protected]
C.-H. Kohli
Affiliation:
EPFL-Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland, [email protected]
R. Sanjinés
Affiliation:
EPFL-Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland, [email protected]
F. Lévy
Affiliation:
EPFL-Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland, [email protected]
T. Gerfin
Affiliation:
Spectrospin AG, CH-8117 Fallanden, Switzerland
M. Grätzel
Affiliation:
Institut de Chimie Physique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Abstract

Conducting thin films of RuO2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa)3) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and fourprobe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c. reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (ρ down to 72 μΩcm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 479
Copyright
Copyright © Materials Research Society 1998

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References

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