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Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

Published online by Cambridge University Press:  28 February 2011

Sunwoo Lee ,
Thuong Ton ,
D. Zych  and
P. A. Dowben
Sunwoo Lee
Affiliation:
Department of Physics and Solid State Science & Technology Program, Syracuse University, Syracuse, New York 13244–1130
Thuong Ton
Affiliation:
Department of Physics, SUNY-Oswego, Oswego, New York 13126
D. Zych
Affiliation:
Department of Physics, SUNY-Oswego, Oswego, New York 13126
P. A. Dowben
Affiliation:
Department of Physics and Solid State Science & Technology Program, Syracuse University, Syracuse, New York 13244–1130
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Abstract

Plasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 483
Copyright
Copyright © Materials Research Society 1993

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References

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