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Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes
Published online by Cambridge University Press: 28 February 2011
Abstract
Plasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.
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- Copyright © Materials Research Society 1993
References
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