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Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

Published online by Cambridge University Press:  28 February 2011

Sunwoo Lee ,
Thuong Ton ,
D. Zych  and
P. A. Dowben
Sunwoo Lee
Affiliation:
Department of Physics and Solid State Science & Technology Program, Syracuse University, Syracuse, New York 13244–1130
Thuong Ton
Affiliation:
Department of Physics, SUNY-Oswego, Oswego, New York 13126
D. Zych
Affiliation:
Department of Physics, SUNY-Oswego, Oswego, New York 13126
P. A. Dowben
Affiliation:
Department of Physics and Solid State Science & Technology Program, Syracuse University, Syracuse, New York 13244–1130
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Abstract

Plasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 483
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Wood, C., in Boron-Rich Solids, AIP Conference Proceedings, edited by Emin, D., Aselage, T. L., Beckel, C. L., Howard, I. A., and Wood, C., 140, 362 (1986)Google Scholar
[2] Galasso, F. S., in Chemical Vapor Deposited Materials. (CRC Press. Boca Raton. 1991). p. 112 Google Scholar
[3] Starks, R. J., Buford, J. T., and Grayson, P. E., in Boron-Rich Solids, AIP Conference Proceedings, edited by Emin, D., Aselage, T. L., Beckel, C. L., Howard, I. A., and Wood, C., 140, 373 (1986)Google Scholar
[4] Wood, C., in Novel Refractory Semiconductors, MRS Symposium Proceedings, edited by Emin, D., Aselage, T. L., and Wood, C., 97, 335 (1987)Google Scholar
[5] Lee, Sunwoo, Mazurowski, J., Ramseyer, G., and Dowben, P. A., J. Appl. Phys. 72, 4925 (1992)Google Scholar
[6] Lee, Sunwoo and Dowben, P. A., Appl. Phys. A, submittedGoogle Scholar
[7] Mazurowski, J., Lee, Sunwoo, Ramseyer, G., and Dowben, P. A., in Wide Band-Gap Semiconductors, MRS Symposium Proceedings, edited by Moustakas, T. D., Pankove, J. I. and Hamakawa, Y., 242, 637 (1992);Google Scholar
Mazurowski, J., Baral-Tosh, S., Ramseyer, G., Spencer, J. T., Kim, Y.-G. and Dowben, P. A., in Plasma Processing and Synthesis of Materials, MRS Symposium Proceedings, edited by Apelian, D. and Székely, J., 190, 101 (1991)Google Scholar
[8] Lee, Sunwoo, Mazurowski, J., O'Brien, W. L, Dong, Q. Y., Jia, J., Callot, T. A., Tan, Y., Miyano, K.E., Ederer, D. L., Mueller, D. R., and Dowben, P. A., J. Phys. D, submittedGoogle Scholar
[9] Zuppiroli, L., Papandreou, N., and Kormann, R., J. Appl. Phys. 70, 246 (1991)Google Scholar
[10] Tamargo, M. C., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Farrell, H. H., Gmitter, T. J., Aspnes, D. E., Weaver, A. L., Zhang, Y., and Skromine, B. J., J. Vac. Sci. Technol. B 10, 692 (1992)Google Scholar
[11] Matsunami, H., in Novel Refractory Semiconductors, MRS Symposium Proceedings, edited by Emin, D., Aselage, T. L. and Wood, C., 97, 171 (1987)Google Scholar
[12] Furukawa, K., Uemoto, A., Shigeta, M., Suzuki, A. and Nakajima, S., Appl. Phys. Lett., 48, 1536 (1986)Google Scholar
[13] Brookes, C.A. and Brookes, E. J., Diamond and Related Materials, 1, 13 (1991)Google Scholar
[14] Grot, S. A., ShGildenblat, G., Hatfield, C.W., Wronski, C. R., Badzian, A. R., Badzian, T. and Messier, R., IEEE Electron Device Lett., 11, 100 (1990)Google Scholar
[15] Roser, M., Hewett, C.A., Moazed, K.L., and Zeidler, J. R., J. Electrochem. Soc. 139, 2001 (1992)Google Scholar