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The Concentration of (SiH2)n Sites in Low and High Defect Density a-Si:H

Published online by Cambridge University Press:  01 February 2011

David C. Bobela ,
T. Su ,
P. C. Taylor ,
A. Madan  and
G. Ganguly
David C. Bobela
Affiliation:
[email protected], University of Utah, Physics, 115 S 1400 E Suite 201, Salt Lake City, Utah, 84112-0830, United States
T. Su
Affiliation:
[email protected], Colorado School of Mines, Golden, Colorado, 80401, United States
P. C. Taylor
Affiliation:
[email protected], Colorado School of Mines, Golden, 80401, United States
A. Madan
Affiliation:
[email protected], MVSystems, Inc., Golden, Colorado, 80401, United States
G. Ganguly
Affiliation:
[email protected], United Solar Ovonics Corp., Auburn Hills, Michigan, 48326, United States
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Abstract

The concentration of polysilane chains (SiH2)n, where n≥1, is estimated for higher quality hydrogenated amorphous silicon (a-Si:H) by pulsed proton nuclear magnetic resonance techniques (1H NMR). Our measurements indicate the minimum hydrogen content of approximately 10% of the total hydrogen is in the (SiH2)n configuration. Similar measurements in a high defect density sample (1017 silicon dangling bond defects cm-3) show that (SiH2)n sites account for ~ 15% of the total hydrogen. While the (SiH2)n infrared absorption (IR) modes are observed in the highly defective sample, no such modes are seen in the higher quality material. The results indicate that a significant amount of the total hydrogen content exists as (SiH2)n regardless of film quality.

Keywords

HbondingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A09-04
Copyright
Copyright © Materials Research Society 2006

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