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Computer Modeling of Lateral Epitaxial Growth Over Oxide

Published online by Cambridge University Press:  25 February 2011

Lynn O. Wilson  and
G. K. Celler
Lynn O. Wilson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
G. K. Celler
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Radiative melting of Si with an extended stationary heater and its crystallization are modeled numerically. The two-dimensional model provides the velocity and shape of the solid-liquid interface, above and below a buried oxide structure with slit-shaped openings. The results show qualitative agreement with the experimental data. Superheating and undercooling are included in the calculation and the amount of superheating is confirmed experimentally.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 623
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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