Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T22:55:32.898Z Has data issue: false hasContentIssue false

Compression Creep Behavior of the 95.5Sn-(4.3, 3.9, 3.8)Ag-(0.2, 0.6, 0.7)Cu Solders

Published online by Cambridge University Press:  26 February 2011

Paul Vianco
Affiliation:
[email protected], Sandia National Laboratories, Microsystem Material and Mech. Behavior, 1515 Eubank Blvd SE, MS0889, Albuquerque, NM, 87123, United States, 505-844-3429, 505-844-4816
Jerome Rejent
Affiliation:
[email protected], Sandia National Laboroatores, Microsystem Materials and Mechanical Behavior, PO Box 5800 MS0889, Albuquerque, NM, 87185-0889, United States
Alice Kilgo
Affiliation:
[email protected], Sandia National Laboroatories, Materials Characterization, PO Box 5800 MS0886, Albuquerque, NM, 87185-0886, United States
Joseph Martin
Affiliation:
[email protected], Sandia National Laboroatores, Microsystem Materials and Mechanical Behavior, PO Box 5800 MS0889, Albuquerque, NM, 87185-0889, United States
Get access

Abstract

The compression creep properties were evaluated for the Pb-free solders 95.5Sn-4.3Ag-0.2Cu (wt.%), 95.5Sn-3.9Ag-0.6Cu, and 95.5Sn-3.8Ag-0.7Cu to determine the effects of small composition differences on time-dependent deformation. The test temperatures were -25°C, 25°C, 75°C, 125°C, and 160°C. The nominal applied stresses were in the range of 2 – 45 MPa. Samples were tested in the as-fabricated condition as well as post-aged at 125°C for 24 hours. Negative creep was recorded for all three alloy compositions. However, the extent of this phenomenon was sensitive to alloy composition and the aging treatment. Creep deformation resulted in the formation of coarsened-particle boundaries within the eutectic regions of the microstructure. The boundaries were comprised of Cu6Sn5 and, to a lesser extent, Ag3Sn particles. The minimum creep rate kinetics were evaluated for these solders. The sinh term exponent, n, was 4 – 6 for the Sn-Ag-0.2Cu and Sn-Ag-0.6Cu solders and 1 – 2 for the Sn-Ag-0.7Cu alloy. The apparent activation energy (ΔH) values were in the range of 30 – 70 kJ/mol for all alloys, indicating that a short-circuit or fast-diffusion mechanism controlled creep deformation. The aging treatment did not consistently alter the rate kinetics parameters amongst the alloys. Separating the minimum creep rate data into the low and high temperature regimes, [-25°C, 75°C] and [75°C, 160°C], respectively, showed that bulk diffusion contributed to creep in the higher temperature regime. The ΔH values for the low temperature regime, which indicated that creep was dominated by a fast-diffusion mechanism, were sensitive to solder composition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Felton, L., Raeder, C., and Knorr, D., J. of Metals, 45 28 (1993).Google Scholar
2. Chuang, C., Lui, T., and Chen, L., J. Elect. Mater. 30 1232 (2001)Google Scholar
3. Darveaux, R., IEEE Trans. CHMT 15 1013 (1992).Google Scholar
4. Vianco, P., Frear, D. and Hosking, F., in Materials Developments in Microelectronic Packaging: Performance and Reliability, Proceedings of the Fourth Electronic Materials and Processing Congress, edited by Singh, P. (ASM, International, Materials Park, OH; 1991), pp 373380.Google Scholar
5. McCormick, M., Chen, J., Kammlott, G., and Jin, S., J. Elect. Mater. 26 954 (1997).Google Scholar
6. Harris, P., Surf. Mount Tech., 11 46 (1999).Google Scholar
7. Lee, N., Slattery, J., Sovinsky, J., and Vianco, P., Proc. Surface Mount International (San Jose, CA, August 28 to September 1, 1994), p. 463.Google Scholar
8. Vianco, P. and Rejent, J., J. of Elect. Mater. 28 1131 (1999); ibid, J. Elect. Mater. 28 1139 (1999).Google Scholar
9. Vianco, P., Rejent, J., and Grant, R., Mater. Trans. of Jap. Inst. of Met., 45 765 (2004).Google Scholar
10. Kung, S., et al., Mater. Trans. of Jap. Inst. of Met., 45 695 (2004).Google Scholar
11. Rist, M., Plumbridge, W., and Cooper, S., J. Elect. Mater. 35 1050 (2006).Google Scholar
12. Pang, J. and Xiong, B., IEEE Trans. on CPT 28 830 (2005).Google Scholar
13. Ohguchi, K.-I., Sasaki, K., and Ishibashi, M., J. Elect. Mater. 35 132 (2006).Google Scholar
14. Environmentally Friendly Electronics: Lead-Free Technology, edited by Hwang, J. (Electrochemical Pub., Ltd., Port Erin, UK; 2001) pp. 231243.Google Scholar
15. Vianco, P., Rejent, J., and Kilgo, A., J. Elect. Mater. 32 142 (2003); ibid, J. Elect. Materials 33 1389 (2004); ibid, J. Elect. Materials 33 1473 (2004).Google Scholar
16. Vianco, P. and Rejent, J., J. of Metals 55 50 (2003).Google Scholar
17. Standard Test Methods for Compression Testing of Metallic Materials at Room Temperature, ASTM E9-89A (American Society for Testing and materials, West Conshohoken, PA, 1995), p. 101.Google Scholar
18. Vianco, P. and Li, J., Mater. Sci. and Eng. 95 693 (1987).Google Scholar
19. Li, J., Mater. Sci. and Eng. 98 465 (1988).Google Scholar
20. Kirkaldy, J., Mater. Sci. and Eng. 409 167 (2005).Google Scholar
21. Astin, J., Tracer Diffusion in Solids (Plenum, New York, 1970)Google Scholar