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Compound Semiconductor Nanocrystals formed by Sequential Ion Implantation

Published online by Cambridge University Press:  28 February 2011

C. W. White ,
J. D. Budai ,
J. G. Zhu ,
S. P. Withrow ,
R. A. Zuhr ,
Y. Chen ,
D. M. Hembree Jr. ,
R. H. Magruder  and
D. O. Henderson
C. W. White
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
J. G. Zhu
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
Y. Chen
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
D. M. Hembree Jr.
Affiliation:
The Y-12 Plant, P. O. Box 2009, Oak Ridge, TN 37831
R. H. Magruder
Affiliation:
Vanderbilt University, 24th Avenue S and Garland, Nashville, TN 37212
D. O. Henderson
Affiliation:
Fisk University, Physics Department, Nashville, TN 37208
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Abstract

Ion implantation and thermal processing have been used to synthesize compound semiconductor nanocrystals (SiGe, GaAs, and CdSe) in both SiO2 and (0001) Al2O3. Equal doses of each constituent are implanted sequentially at energies chosen to give an overlap of the profiles. Subsequent annealing results in precipitation and the formation of compound nanocrystals. In SiO2 substrates, nanocrystals are nearly spherical and randomly oriented. In Al2O3, nanocrystals exhibit strong orientation both in-plane and along the surface normal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 169
Copyright
Copyright © Materials Research Society 1995

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References

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