Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-12T07:46:25.539Z Has data issue: false hasContentIssue false
  • English
  • Français

Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  11 February 2011

R. Kröger ,
S. Einfeldt ,
Z. J. Reitmeier ,
R. Chierchia ,
P. Ryder ,
D. Hommel  and
R. F. Davis
R. Kröger
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
S. Einfeldt
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
Z. J. Reitmeier
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Campus Box 7907, Raleigh, NC 27695
R. Chierchia
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
P. Ryder
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
D. Hommel
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
R. F. Davis
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Campus Box 7907, Raleigh, NC 27695
Get access

Abstract

The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy in conjunction with energy dispersive X-ray spectroscopy. A significant spatial variation of composition was found in 100 nm thick layers the nature of which could be traced back to the initial stage of film formation. Upon nucleation two phases are formed: a wetting layer and isolated islands of high and low aluminum content, respectively. The observed results are discussed in terms of strain and growth rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.51
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moran, B., Hansen, M., Craven, M.D., Speck, J.S., DenBaars, S.P., J. Cryst. Growth 221, 301 (2000).Google Scholar
2. Lahrèche, H., Vennéguès, P., Vaille, M., Beaumont, B., Laügt, M., Lorenzini, P., Gibart, P., Semicond. Sci. Technol. 14, L33 (1999).Google Scholar
3. Smart, J.A., Schremer, A.T., Weimann, N.G., Ambacher, O., Eastman, L.F., Shealy, J.R., Appl. Phys. Lett. 75, 388 (1999).Google Scholar
4. Bremser, M.D., Perry, W.G., Zheleva, T., Edwards, N.V., Nam, O.H., Parikh, N., Aspnes, D.E., Davis, R.F., MRS Internet J. Nitride Semicond. Res. 1, 8 (1996).Google Scholar
5. Vennéguès, P., Lahrèche, H., Appl. Phys. Lett. 77, 4310 (2000).Google Scholar
6. Heinke, H., Möller, M.O., Hommel, D., Landwehr, G., J. Cryst. Growth 135, 41 (1994).Google Scholar