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Compositional Effects on the Degradation of PVD-Tisin

Published online by Cambridge University Press:  10 February 2011

W. F. McArthur ,
F. Deng ,
K. Ring ,
P. M. Pattison  and
K. L. Kavanagh
W. F. McArthur
Affiliation:
Electrical and Computer Engineering Dept. Materials Science Program, University of California San Diego, La Jolla, CA 92093–0407
F. Deng
Affiliation:
Electrical and Computer Engineering Dept. Materials Science Program, University of California San Diego, La Jolla, CA 92093–0407
K. Ring
Affiliation:
Electrical and Computer Engineering Dept. Materials Science Program, University of California San Diego, La Jolla, CA 92093–0407
P. M. Pattison
Affiliation:
Electrical and Computer Engineering Dept. Materials Science Program, University of California San Diego, La Jolla, CA 92093–0407
K. L. Kavanagh
Affiliation:
Electrical and Computer Engineering Dept. Materials Science Program, University of California San Diego, La Jolla, CA 92093–0407
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Abstract

PVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μω-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 241
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Wang, S-Q., “Advanced Metallization for ULSI Applications” edited by Favreau, D.P., Shacham-Diamond, Y., and Horiike, Y. (Mat. Res. Soc. Proc. San Diego, CA, USA, 1993) p31–47.Google Scholar
2. Sun, X., “Reactively Sputtered Ti-Si-N Thin Films for Diffusion Barrier Applications”, Ph.D. Thesis, Caltech, 1997.Google Scholar
3. Smith, P.M., Custer, J. S., Maverich, A.W., Roberts, D.A., Norman, J.A.T., Hochberg, A.K., Bai, G., Reid, J.S., and Nicolet, M-A., “Advanced Metallization and Interconnect Systems for ULSI Applications, 1995”, Mat Res Society Symp. (1996).Google Scholar
4. McArthur, W.F., Ring, K.M., Kavanagh, K.L., “Structural and Electrical Characterization of Si-implanted TiN as a Diffusion Barrier for Cu Metallization”, (Materials Reliability in Microelectronics V. Symposium, Mat. Res. Soc, San Francisco, CA, USA, 17–21 April 1995). Edited by Oates, A.S.; Filter, W.F.; Rosenberg, R.; Greer, A.L.; and others. Pittsburg, PA, USA; Mater. Res. Soc. 1995. p 327–32.Google Scholar
5. Iijima, T., Shimooka, Y., Suguro, K., “An Amorphous Ti-Si-N Diffusion Barrier for Cu Interconnects” Electronics and Communications in Japan, Part 2, 78 (1995) 67.Google Scholar