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Compositional Characterization of Very Thin SiO2/Si3N4/SiO2 Stacked Films by XPS Using The “Auger Parameter Method”

Published online by Cambridge University Press:  15 February 2011

S. Santucci ,
L. Lozzi ,
M. Passacantando ,
P. Picozzi ,
R. Alfonsetti ,
F. Fama  and
G. Moccia
S. Santucci
Affiliation:
Dipartimento di Fisica UniversitA di L'Aquila, 67010 Coppito (AQ) -, Italy
L. Lozzi
Affiliation:
Dipartimento di Fisica UniversitA di L'Aquila, 67010 Coppito (AQ) -, Italy
M. Passacantando
Affiliation:
Dipartimento di Fisica UniversitA di L'Aquila, 67010 Coppito (AQ) -, Italy
P. Picozzi
Affiliation:
Dipartimento di Fisica UniversitA di L'Aquila, 67010 Coppito (AQ) -, Italy
R. Alfonsetti
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
F. Fama
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
G. Moccia
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
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Abstract

ONO (SiO2/Si3N4/SiO2) structures with thickness less than 10 nm were deposited onto silicon wafers by successive steps using two different method. The effects of the forming time and temperature on the stoichiometry of the single layers and of the whole sandwich have been studied using X-ray Photoelectron Spectroscopy (XPS). This paper demonstrates that the “Auger parameter method” is highly suitable in quantifying the composition of very thin insulating structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 437
Copyright
Copyright © Materials Research Society 1995

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References

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