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Comparison of Porous Silicon Etched Gently and Under Illumination

Published online by Cambridge University Press:  28 February 2011

Adam A. Filios  and
Raphael Tsu
Adam A. Filios
Affiliation:
University of North Carolina at Charlotte, Charlotte NC 28223
Raphael Tsu
Affiliation:
University of North Carolina at Charlotte, Charlotte NC 28223
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Abstract

Porous silicon samples prepared in the dark under "gentle" etching conditions clearly demonstrate effects of quantum confinement, such as a correlation of the photoluminescence peak energy with the downshift of the Raman line from 521 cm−1 for bulk silicon, and a blue shift in the remaining weak photoluminescence after thermal annealing. On the other hand, samples prepared under illumination as well as those heavily etched in the dark, though luminesce brightly, show no significant effects of quantum confinement, suggesting a different dominant mechanism for the observed luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 363
Copyright
Copyright © Materials Research Society 1995

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References

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