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Comparison of Laser and Oven Annealing Effects on Hydrogen and Microstructure in Thin Film Silicon

Published online by Cambridge University Press:  13 May 2015

W. Beyer ,
J. Bergmann ,
U. Breuer ,
F. Finger ,
A. Lambertz ,
T. Merdzhanova ,
N.H. Nickel ,
F. Pennartz ,
T. Schmidt  and
U. Zastrow
W. Beyer
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
J. Bergmann
Affiliation:
FA7.3, Leibniz-Institut für Photonische Technologien e.V., PF 100239, D-07702 Jena, Germany
U. Breuer
Affiliation:
ZEA-3, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
F. Finger
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
A. Lambertz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
T. Merdzhanova
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
N.H. Nickel
Affiliation:
Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstrasse 5, D-12489 Berlin, Germany
F. Pennartz
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
T. Schmidt
Affiliation:
FA7.3, Leibniz-Institut für Photonische Technologien e.V., PF 100239, D-07702 Jena, Germany
U. Zastrow
Affiliation:
IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Laser and oven annealing effects on hydrogen concentration, hydrogen diffusion and material microstructure in hydrogenated amorphous silicon films deposited on crystalline silicon substrates are compared. For laser annealing, a 6 W green (532 nm) continuous wave laser with 100 µm focus diameter was applied and samples of about 1 cm2 were scanned in ambient with a line distance of 50 µm and at a speed of 1 – 100 mm/s. Hydrogen content and microstructure were measured by infrared spectroscopy, and hydrogen diffusion was investigated by secondary ion mass spectroscopy (SIMS) measurements of depth profiles of deuterium and hydrogen in layered structures of deuterated and hydrogenated material. The results show that in both annealing experiments hydrogen diffuses predominantly in form of atoms although some formation of H2 molecules cannot be excluded. By comparison of laser and oven treatment, an effective temperature describing the laser treated state can be defined. Furthermore, the temperature of the thin silicon film during laser treatment is estimated.

Keywords

laser annealingamorphousSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1770: Symposium A – Emerging Silicon Science and Technology , 2015 , pp. 1 - 6
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Serin, T. and Serin, N., Semicond. Sci. Technol. 6, 679 (1991).CrossRefGoogle Scholar
De Wolf, S., Descoeudres, A., Holman, Z.C. and Ballif, C., Green 2, 7 (2012).CrossRefGoogle Scholar
Beyer, W., Einsele, F., in: Advanced Characterization Techniques for Thin Film Solar Cells, edited by D. Abou-Ras, T. Kirchartz, U. Rau (Wiley-VCH, Weinheim, Germany, 2011) p. 449. Google Scholar
Beyer, W. and Abo Ghazala, M.S., MRS Symp. Proc. 507, 601 (1998).CrossRefGoogle Scholar
Mahan, A.H., Raboisson, P., Williamson, D.L., Tsu, R., Solar Cells 21, 117 (1987).CrossRefGoogle Scholar
Shanks, H.R. and Ley, L., J. Appl. Phys. 52, 811 (1981).CrossRefGoogle Scholar
Beyer, W., Hilgers, W., Lennartz, D., Maier, F.C., Nickel, N.H., Pennartz, F. and Prunici, P., MRS Symp Proc 1666 (2014).CrossRefGoogle Scholar
Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81 (1978).CrossRefGoogle Scholar
Beyer, W., in: Semiconductors and Semimetals 61, edited by N.H. Nickel (Academic Press, San Diego, 1999) p. 165. CrossRefGoogle Scholar
Beyer, W., Phys. Status Solidi C1, 1144 (2004).CrossRefGoogle Scholar
Blum, N.A. and Feldman, C., J. Non-Cryst. Solids 11, 242 (1972).CrossRefGoogle Scholar