Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T13:41:09.552Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Glycine and Citric Acid as Complexing Agents in Copper Chemical-Mechanical Polishing Slurries

Published online by Cambridge University Press:  01 February 2011

Venkata Gorantla  and
S.V. Babu
Venkata Gorantla
Affiliation:
Center for Advanced Materials Processing, and Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699.
S.V. Babu
Affiliation:
Center for Advanced Materials Processing, and Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699.
Get access

Abstract

Two complexing agents, glycine and citric acid, in hydrogen peroxide based slurries for planarizing copper have been compared. Copper dissolution and polish rates and in situ electrochemical experimental results at various slurry pH values and hydroxyl radical concentrations at pH=8.4 are presented. It was observed that the pH of the slurry has a strong influence on copper dissolution and polish rates. While high copper removal rates were observed with citric acid-peroxide solutions at low pH values, glycineperoxide system yielded high Cu removal rates at alkaline pH values. Copper dissolution rates in both the systems at pH 4 and 8 were consistent with the electrochemical measurements. The concentration of hydroxyl radicals generated in citric acid-peroxide system was less than that of those generated in glycine peroxide system at pH=8.4 indicating low copper removal rates at alkaline conditions in the former system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Luo, Q. Ramarajan, S. and Babu, S. V. Thin Solid Films, 335, pp. 160–167 (1998).Google Scholar
2. Lee, S.-M., Mahajan, U. Chen, Z. and Singh, R. K. in Chemical-Mechanical Polishing 2000-Fundamentals and Materials Issues, edited by R. K. Singh, R. Bajaj, M. Moinpour, and M. Meuris (Mater. Res. Soc. Proc. 613, Warrendale, PA, 2001) p. E7.8.1. Google Scholar
3. Hirabayashi, H. Higuchi, M. Kinoshita, M. Kaneko, H. Hayasaka, N. Mase, K. and Oshima, J., in Proceedings of CMP-MIC Conference, p. 119, Santa Clara, CA (1996).Google Scholar
4. Kondo, S. Sakuma, N. Homma, Y. and Ohashi, N. in Electrochemical Society Proceedings, Vol. 98-6, pp. 195–205.Google Scholar
5. Hariharaputhiran, M. Li, Y. Ramarajan, S. and Babu, S. V. Electrochem. Solid-State Lett., 3 (2), 95–98 (2000).Google Scholar
6. Hariharaputhiran, M. Zhang, J. Ramarajan, S. Keleher, J. J. Li, Y. and Babu, S. V. J. Electrochem. Soc., 147, p.3820 (2000).Google Scholar
7. Carter, M. K. and Small, R. J. J. Electrochem. Soc., 150 (2), pp. G107–G111 (2003).Google Scholar
8. Hernandez, J. Wrschka, P. and Oehrlein, G. S. J. Electrochem. Soc., 148 (7), pp. G389–G397 (2001).Google Scholar
9. Seal, S. Kuiry, S. C. and Heinmen, B., Thin Solid Films, 423, pp: 243–251 (2003).Google Scholar
10. Hu, T. C. Chiu, S. Y. Dai, B. T. Tsai, M. S. Tung, I. C. andFeng, M. S. Mater. Chem. Phys., 61, 167 (1999).Google Scholar
11. Tamilamani, S. Huang, W. Raghavan, S. and Small, R. J. Electrochem. Soc., 149 (12) G638–G642 (2002).Google Scholar
12. Jindal, A. Li, Y. and Babu, S. V. in Chemical-Mechanical Polishing- Advances and Future Challenges, edited by S. V. Babu, K. C. Cadien, H.|Yano (Mater. Res. Soc. Proc. 671, Warrendale, PA, 2001) p. M6.8.1. Google Scholar