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Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates

Published online by Cambridge University Press:  21 March 2011

B. A. Grayson ,
J. T. Wolan ,
M. Graves ,
M. Bledsoe ,
K. Kirchner  and
S. E. Saddow
B. A. Grayson
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
J. T. Wolan
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595 Corresponding author
M. Graves
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
M. Bledsoe
Affiliation:
Emerging Materials Research Laboratory, Dept of ECE, Mississippi State, MS 39762-9571
K. Kirchner
Affiliation:
Sensors and Electron Devices Directorate, Army Research Laboratory, Adelphi, MD 20783-1197
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Dept of ECE, Mississippi State, MS 39762-9571
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Abstract

In this study, the near-surface region of air-exposed thin 3C-SiC films grown on 50-mm (2-in.) diameter Si(111) and Si(211) substrates have been investigated. Carbonization to create the film in a radio-frequency (RF) induction-heated horizontal atmospheric-pressure chemicalvapor- deposition reactor utilized a propane-hydrogen mix (3% C3H8 in ultra-high purity hydrogen) with a hydrogen carrier. Elemental and chemical-state identification of the thin-films are presented. Several structure sensitive techniques including X-ray diffractaion (XRD) in ω-2θ as well as scanning electron microscopy (SEM) to examine crystal structure, surface morphology and film thickness are included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.43
Copyright
Copyright © Materials Research Society 2001

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References

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