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Comparison Between Chemical and Plasmatic Treatment of Seeding Layer for Patterned Diamond Growth

Published online by Cambridge University Press:  31 January 2011

Alexander Kromka ,
Oleg Babchenko ,
Bohuslav Rezek ,
Karel Hruska ,
Adam Purkrt  and
Zdenek Remes
Alexander Kromka
Affiliation:
[email protected], Institute of physics, Prague, Czech Republic
Oleg Babchenko
Affiliation:
[email protected], Institute of physics, Prague, Czech Republic
Bohuslav Rezek
Affiliation:
[email protected], Institute of physics, Prague, Czech Republic
Karel Hruska
Affiliation:
[email protected], Institute of physics, Prague, Czech Republic
Adam Purkrt
Affiliation:
[email protected], Institute of physics, Prague, Czech Republic
Zdenek Remes
Affiliation:
[email protected]
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Abstract

We employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2. The advantage of this novel treatment is short processing time, simplicity, and minimal damage of the substrate surface.

Keywords

diamondplasma-enhanced CVD (PECVD) (deposition)microstructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J17-53
Copyright
Copyright © Materials Research Society 2010

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