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A Comparative Study on the Activation Behavior of Implanted Boron and Phosphorus for LTPS Using Solid-Phase Crystallization

Published online by Cambridge University Press:  30 July 2012

Qinglong Li ,
Tarun Mudgal ,
Patricia M. Meller ,
Seth Slavin ,
Robert G. Manley  and
Karl D. Hirschman
Qinglong Li
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
Tarun Mudgal
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
Patricia M. Meller
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
Seth Slavin
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
Robert G. Manley
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
Karl D. Hirschman
Affiliation:
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, 82 Lomb Memorial Drive, Rochester, NY 14623
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Abstract

This work presents a study on the activation behavior of high-dose (φ > 1015 cm-2) boron and phosphorus implants for low resistance source and drain regions for thin-film transistors (TFTs) fabricated using solid-phase crystallization (SPC) of amorphous silicon. Process variables include factors associated with ion implant and annealing conditions, as well as the SPC and implant process arrangement. Four-point probe sheet resistance (Rs) measurements were used as a comprehensive assessment of the electrical properties. Results have identified similarities and differences in activation behavior that can influence process integration strategies considering both the SPC approach and TFT fabrication.

Keywords

thin filmpolycrystalSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 281 - 286
Copyright
Copyright © Materials Research Society 2012

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References

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