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Comparative study of the structural and optical properties of CIS films prepared by RFmagnetron sputtering and selenization of elemental layers

Published online by Cambridge University Press:  21 March 2011

António F. Cunha ,
M.M. Pereira de Azevedo ,
Ricardo J.O. Ferrão ,
A.A.C.S. Lourenço  and
Claude Boemare
António F. Cunha
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
M.M. Pereira de Azevedo
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
Ricardo J.O. Ferrão
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
A.A.C.S. Lourenço
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
Claude Boemare
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
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Abstract

We report on a study where the properties of films obtained by RF-magnetron sputtering and by Selenization of elemental precursor layers are analysed by Raman scattering, x-ray diffraction and optical measurements. Three routes were followed to prepare CIS films on glass. CIS type-I was prepared by selenization at various temperatures, CIS type-II was prepared by RF-magnetron sputtering on room temperature substrate followed by annealing at 450°C in air for 10 min and CIS type-III was prepared by RF-magnetron sputtering on a substrate at a temperature ranging from 200°C up to 500°C with a post-deposition annealing in the same conditions as for CIS type-II. Correlating the results from x-ray diffraction with the Raman scattering and optical measurements it was possible to establish unequivocally the formation of CIS with the chalcopyrite structure for CIS type-I at 400°C. Through the same procedure it was possible to establish a way to produce CIS type-II with the chalcopyrite structure. A high density of defects was inferred from the transmission results. Finally the growth dynamics of CIS type-III was studied. It was observed a structural/compositional transition around substrate temperature of 300°C. It was observed that all the films had a sphalerite structure even for the highest substrate temperatures. It was establish the need for a post-deposition annealing to obtain CIS type-III with the chalcopyrite structure. The Raman scattering was found to be a very sensitive technique that allowed us to uncover a difference in the CIS type-I and II with the chalcopyrite structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.18
Copyright
Copyright © Materials Research Society 2001

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References

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