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Comparative Photoluminescence Measurement and Simulation of Vertical-Cavity Semiconductor Laser Structures

Published online by Cambridge University Press:  21 February 2011

D.T. Schaafsma ,
D.H. Christensen ,
R.K. Hickernell  and
J.G. Pellegrino
D.T. Schaafsma
Affiliation:
Also of Department of Physics, University of Colorado, Boulder, CO 80309.
D.H. Christensen
Affiliation:
Also of Department of Physics, University of Colorado, Boulder, CO 80309.
R.K. Hickernell
Affiliation:
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80303.
J.G. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899.
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Abstract

We present comparisons of photoluminescence (PL) data for various vertical-cavity surface-emitting laser (VCSEL) and distributed quantum well structures taken with the pump beam (and the collection path) in two different configurations: normal to the surface of the sample; and perpendicular to a cross-section of the epitaxial layers. We demonstrate that the cross-sectional PL (XPL) technique can resolve individual features in the structures, and that the surface-normal PL (NPL) spectra are perturbed by the multilayer mirrors in the VCSELs. We elucidate a potential method for transforming between the NPL spectra and the non-perturbed XPL spectra and evaluate the sensitivity of this method to various measurement as well as material parameters. This simulation technique is well-suited to wide parametric variations of the dispersion curves for the complex dielectric constant of the materials, the pump field distribution, and the depth profile of the gain medium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 483
Copyright
Copyright © Materials Research Society 1994

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References

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