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Combinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor

Published online by Cambridge University Press:  01 February 2011

Tatsuya Iwasaki ,
Naho Itagaki ,
Tohru Den ,
Hideya Kumomi ,
Kenji Nomura ,
Toshio Kamiya  and
Hideo Hosono
Tatsuya Iwasaki
Affiliation:
[email protected], Canon Inc., Canon Research Center, 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan, Tokyo, N/A, N/A, Japan, +81-3-3758-2111, 81-3-3757-3096
Naho Itagaki
Affiliation:
[email protected], Canon Inc., Canon Research Center, 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo, N/A, N/A, Japan
Tohru Den
Affiliation:
[email protected], Canon Inc., Canon Research Center, 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo, N/A, N/A, Japan
Hideya Kumomi
Affiliation:
[email protected], Canon Inc., Canon Research Center, 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo, N/A, N/A, Japan
Kenji Nomura
Affiliation:
[email protected], ERATO-SORST, Japan Science and Technology Agency, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan
Toshio Kamiya
Affiliation:
[email protected], ERATO-SORST, Japan Science and Technology Agency, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan
Hideo Hosono
Affiliation:
[email protected], ERATO-SORST, Japan Science and Technology Agency, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan
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Abstract

The device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V−1sec−1 and on-to-off current ratio of ∼108.

Keywords

oxidesemiconductingcombinatorial synthesis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG10-04
Copyright
Copyright © Materials Research Society 2006

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