Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-12T09:43:33.827Z Has data issue: false hasContentIssue false
  • English
  • Français

“Column-By-Column” Compositional Mapping At Semiconductor Interfaces Using Z-Contrast Stem

Published online by Cambridge University Press:  21 February 2011

D. E. Jesson ,
S. J. Pennycook  and
J. -M. Baribeau
D. E. Jesson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024
J. -M. Baribeau
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, K1AOR6, Canada
Get access

Abstract

A new strategy for atomic resolution compositional mapping at semiconductor interfaces is presented. Images can be interpreted directly to within 10% to give column-by-column compositional information with a sensitivity approaching Rutherford scattering cross sections. We apply the method to obtain the first atomic resolution images of interfacial ordering in ultrathin (SimGen)p superlattices and attribute the results to growth on (2 × 1) and (1 × 2) reconstructed surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 223
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ourmazd, A., Taylor, D. W., Cunningham, J., and Tu, C. W., Phys. Rev. Lett. 62, 933 (1989).Google Scholar
2. Bourret, A., p. 293 in Characterizationo f the Structure and Chemistry of Defects in Materials, ed. by Larson, B. C., Riuhle, M., and Seidman, D. N., Materials Research Society Symposia Series No. 139, Materials Research Society, Pittsburgh, Pennsylvania, 1989.Google Scholar
3. Pennycook, S. J. and Jesson, D. E., Phys. Rev. Lett. 64, 938 (1990).10.1103/PhysRevLett.64.938Google Scholar
4. Jesson, D. E., Pennycook, S. J., and Chisholm, M. F., in Atomic Scale Structure of Interfaces, ed. by Bringans, R. D., Feenstra, R. M., and Gibson, J. M., Materials Research Society, Pittsburgh, Pennsylvania (in press).Google Scholar
5. Pennycook, S. J., Jesson, D. E., and Chisholm, M. F., in Proc. of SPIE's 1990 Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications, SPIE, Bellingham, Washington (in press).Google Scholar
6. Hirsch, P. B., Howie, A., and Whelan, M. J., Phil. Trans. Roy. Soc. London A 252, 499 (1960).10.1098/rsta.1960.0013Google Scholar
7. Ourmazd, A. and Bean, J. C., Phys. Rev. Lett. 55, 765 (1985).10.1103/PhysRevLett.55.765Google Scholar
8. Littlewood, P. B., Phys. Rev. B 34, 1363 (1986).10.1103/PhysRevB.34.1363Google Scholar
9. Ciraci, S. and Batra, I. P., Phys. Rev. B 38, 1835 (1988).10.1103/PhysRevB.38.1835Google Scholar
10. LeGoues, F. K., Kesan, V. P., and Iyer, S. S., Phys. Rev. Lett. 64, 40 (1990).Google Scholar
11. Muller, E., Nissen, H.-U., Ospelt, M., and von Kädnel, H., Phys. Rev. Lett. 63, 1819 (1989).Google Scholar
12. Jesson, D. E., Pennycook, S. J., and Baribeau, J.-M., submitted to Phys. Rev. Lett (1990).Google Scholar
13. Weser, T., Bogen, A., Konrad, B., Schell, R. D., Schug, C. A., Moritz, W., and Steinmann, W., Phys. Rev. B 35, 8184 (1987).10.1103/PhysRevB.35.8184Google Scholar